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inchange semiconductor product specification silicon npn power transistors S2000A1 description with to-3ph package high voltage ,high speed low collector saturation voltage applications color tv horizontal output applications color tv switching regulator applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter abosolute maximum ratings (t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 15 a i b base current 4 a p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3ph) and symbol
inchange semiconductor product specification 2 silicon npn power transistors S2000A1 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 700 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v ce (sat) collector-emitter saturation voltage i c =4.5a ;i b =2a 1.0 v v be (sat) base-emitter saturation voltage i c =4.5a ;i b =2.0a 1.5 v i cbo collector cut-off current v cb =1500v; v be =0 1 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 40 h fe-2 dc current gain i c =4.5a ; v ce =5v 4.5 9 c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 95 pf f t transition frequency i c =0.1a ; v ce =10v 2 mhz
inchange semiconductor product specification 3 silicon npn power transistors S2000A1 package outline fig.2 outline dimensions

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